Operation And Modeling Of The Mos Transistor

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Key Features Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

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Yannis Tsividis Charles Batchelor Professor of Electrical Engineering, Columbia University. Table of Contents Semiconductors, Junctions, and MOSFET Overview The Two-Terminal MOS Structure The Three-Terminal MOS Structure The Four-Terminal MOS Transistor MOS Transistors and Ion-Implanted Channels Small-Dimension Effects The MOS Transistor in Dynamic Operation-Large-Signal Modeling Small-Signal Modeling for Low and Medium Frequencies High-Frequency Small-Signal Models MOSFET Modeing for Circuit Simulation Index