X Ray Scattering From Semiconductors

0.0

X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, and more. This text provides a description of the techniques involved in obtaining that information, including X-ray diffractometers and their associated instrument functions, data collection methods, and the simulation of the diffraction patterns observed. Also presented are examples and procedures for interpreting the data to build a picture of the sample, much of which is common to materials other than semiconductors.

0.0

Paul F Fewster is Head of PANalytical Research Centre, UK. He is also a visiting Professor in Physics at Imperial College, London and Vice-President of the British Crystallographic Association. Paul has worked in the field of X-ray scattering and semiconductors for over 25 years and was awarded the Paterson Prize and Medal from the Institute of Physics (1991) and a DSc in crystallography from London University. He developed the physics for the Materials Research Diffractometer and dynamical simulation analysis software along with many other aspects in the field of X-Ray diffraction. --This text refers to an alternate Hardcover edition.