Semiconductor Device Modeling with Spice

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Semiconductor Device Modeling with SPICE Second Edition With all the clarity and hands-on practicality of the best-selling first edition, this revised version explains the ins and outs of SPICE, plus gives new data on modeling advanced devices such as MESFETs, ISFETs, and thyristors. And because it's the only book that describes the models themselves, it helps readers gain maximum value from SPICE, rather than just telling them how to run the program. This guide is also distinctive in covering both MOS and FET models. Step by step, it takes the reader through the modeling process, providing complete information on a variety of semiconductor devices for designing specific circuit applications.

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Giuseppe Massobrio is a research in the department of electronic engineering (DIBE) at the University of Genova. He has done research in the areas of semiconductor device modeling as well as circuit simulation and optimization. Table of Contents Chapter 1. PN Junction Diode and Schottky Diode 1.1 DC Current- Voltage Characteristics 1.2 Static Model 1.3 Large- Signal Model 1.4 Small- Signal Model 1.5 Schottky Diode and its implementation in SPICE2 1.6 Temperature and Area Effects on the Diode Model Parameters 1.7 SPICE3 Models 1.8 HSPICE Models 1.9 PSPICE Models References Chapter 2. Bipolar Junction Transistor (BJT) 2.1 Transistor Conversions and Symbols 2.2 Ebers-Moll Static Model 2.3 Ebers-Moll Large- Signal Model 2.4 Ebers-Moll Small- Signal Model 2.5 Gummel-Poon Static Model 2.6 Gummel-Poon Large- Signal Model 2.7 Gummel-Poon Small- Signal Model 2.8 Temperature and Area Effects on the BJT Model Parameters 2.9 Power BJT Model 2.10 SPICE3 Models 2.11 HSPICE Models 2.12 PSPICE Models References Chapter 3. Junction Field-Effect Transistor (JFET) 3.1 Static Model 3.2 Large- Signal Model and its implementation in SPICE2 3.3 Small- Signal Model and its implementation in SPICE2 3.4 Temperature and Area Effects on the JFET Model Parameters 3.5 SPICE3 Models 3.6 HSPICE Models 3.7 PSPICE Models References Chapter 4. Metal Oxide-Semiconductor Transistor (MOST) 4.1 Structure and Operating Regions of the MOST 4.2 LEVEL 1 Static Model 4.3 LEVEL 2 Static Model 4.4 LEVEL 1 and LEVEL 2 Large-Signal Model 4.5 LEVEL 3 Static Model 4.6 LEVEL 3 Large-Signal Model 4.7 Comments on the Three Models 4.8 The Effects of Series Resistances 4.9 Small-Signal Models 4.10 The Effect on Temperature on the MOST Model Parameters 4.11 BSIM1 Model 4.12 BSIM2 Model 4.13 SPICE3 Models 4.14 HSPICE Models 4.15 PSPICE Models References Chapter 5. BJT Parameter Measurements 5.1 Input and Model Parameters 5.2 Parameter Measurements References Chapter 6. MOST Parameter Measurements 6.1 LEVEL1 Model Parameters 6.2 LEVEL2 Model (Long-Channel) Parameters 6.3 LEVEL2 Model (Short-Channel) Parameters 6.4 LEVEL3 Model Parameters 6.5 Measurements of Capacitance 6.6 BSIM Model Parameter Extraction References Chapter 7. Notes and Distortion 7.1 Notes 7.2 Distortion References Chapter 8. The SPICE Program 8.1 SPICE2 Capabilities 8.2 SPICE2 Structure 8.3 Convergence Problems 8.4 SPICE2 Operation 8.5 Linked-List Specification 8.6 SPICE3 Capabilities Versus SPICE2 8.7 HSPICE Capabilities Versus SPICE2 8.8 PSPICE Capabilities Versus SPICE2 References Chapter 9. Metal-Semiconductor Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor and Semiconductor-Controlled Rectifier 9.1 MESFET 9.2 ISFET 9.3 THYRISTOR References Appendix A. PN Junction A.1 Elements of Semiconductor Physics A.2 Physical operation of the PN Junction References Appendix B. MOS Junction B.1 MOS Junction References Appendix C. MS Junction C.1 MS Junction References